SSF1331P -1.5a, -30v, r ds(on) 0.112 ? p-channel mosfet elektronische bauelemente 17-jun-2010 rev. a page 1 of 4 rohs compliant product a suffix of ?-c? specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. features ? low rds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe sot-323 saves board space. ? fast switching speed. ? high performance trench technology. product summary v ds (v) r ds (on) ( ? ? i d (a) -30 0.112@v gs = -10v -1.5 0.172@v gs = -4.5v -1.2 maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit drain ? source voltage v ds -30 v gate ? source voltage v gs 20 v continuous drain current a i d @ t a =25c -1.5 a i d @ t a =70c -1.2 pulsed drain current b i dm -2.5 a continuous source current (diode conduction) a i s 0.28 a power dissipation a p d @ t a =25c 0.34 w p d @ t a =70c 0.22 operating junction & storage temperature range t j , t stg -55~150 c thermal resistance ratings maximum thermal resistance junction-ambient a t Q 5 sec r ja 375 c / w steady-state 430 note: a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature. ref. millimete r ref. millimete r min. max. min. max. a 1.80 2.20 g 0.100 ref. b 1.80 2.45 h 0.525 ref. c 1.15 1.35 j 0.08 0.25 d 0.80 1.10 k - - e 1.20 1.40 l 0.650 typ. f 0.20 0.40 sot-323 top view a l c b d g h j f k e 1 2 3 1 2 3 ? ? gate ? ? source ? ? drain
SSF1331P -1.5a, -30v, r ds(on) 0.112 ? p-channel mosfet elektronische bauelemente 17-jun-2010 rev. a page 2 of 4 electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min typ max unit test condition static caracteristics gate-threshold voltage v gs(th) -1 - - v v ds = v gs, i d = -250 a gate-source leakage current i gss - - 100 na v ds = 0v, v gs = 20v zero gate voltage drain current i dss - - -1 a v ds = -24v, v gs = 0v - - -10 v ds = -24v, v gs = 0v, t j = 55c on-state drain current a i d(on) -5 - - a v ds = -5v, v gs = -10v drain-source on-resistance a r ds(on) - - 112 m ? v gs = -10v, i d = -1.5a - - 172 v gs = -4.5v, i d = -1.2a forward transconductance a g fs - 9 - s v ds = -5v, i d = -1.5a diode forward voltage v sd - -0.65 - v i s = -0.46a, v gs = 0v dynamic characteristics b total gate charge q g - 7.2 - nc v ds = -10v v gs = -5v i d = -1.5a gate-source charge q gs - 1.7 - gate-drain charge q gd - 1.5 - turn-on delay time t d(on) - 10 - ns v dd = -10v i l = -1a v gen = -4.5v r g = 6 ? rise time t r - 9 - turn-off delay time t d(off) - 27 - fall time t f - 11 - notes a. pulse test pw Q 300us duty cycle Q 2%. b. guaranteed by design, not s ubject to production testing. c. repetitive rating, pulse width limited by junction temperature.
SSF1331P -1.5a, -30v, r ds(on) 0.112 ? p-channel mosfet elektronische bauelemente 17-jun-2010 rev. a page 3 of 4 characteristic curves
SSF1331P -1.5a, -30v, r ds(on) 0.112 ? p-channel mosfet elektronische bauelemente 17-jun-2010 rev. a page 4 of 4 characteristic curves
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